Breakdown Behavior of 40-nm PD-SOI NMOS Device Considering STI-Induced Mechanical Stress Effect

V C Su,D Chen,C T Tsai,G S Lin,C S Yeh,J B Kuo,I S Lin,M Ma

doi:10.1109/led.2008.922971

Breakdown Behavior of 40-nm PD-SOI NMOS Device Considering STI-Induced Mechanical Stress Effect

V C Su, D Chen + Show 6 more

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https://doi.org/10.1109/led.2008.922971

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Journal: IEEE Electron Device Letters	Publication Date: Jun 1, 2008
Citations: 12	License type: mit

Affiliation: United Microelectronics (Taiwan), National Taiwan University

#2D Simulation Results #Shallow-trench-isolation + Show 8 more

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Abstract

This letter reports the shallow-trench-isolation (STI)-induced mechanical-stress-related breakdown behavior of the 40-nm PD-SOI NMOS device. As verified by the experimentally measured data and the 2D simulation results, breakdown occurs at a higher drain voltage for the device with a smaller S/D length of 0.17 mum due to the weaker function of the parasitic bipolar device, which is offset by the stronger impact ionization in the post-pinchoff region coming from the bandgap narrowing generated by the STI-induced mechanical stress.

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