Abstract
An analysis of the breakdown and capacitance properties of punch-through hyperabrupt epitaxial Schottky barrier diodes has been carried out. Results are given for the dependence of breakdown voltage of such a device on surface concentration and epitaxial layer thickness. Design curves are given for epitaxial hyperabrupt schottky varactor diodes. The design procedure yields an optimal impurity profile in which just-punch-through occurs at the highest voltage of operation. This gives a maximum dynamic range of operation still keeping the series resistance to a minimum. A corrected boundary condition to determine the profile constants associated with an n/n+ (high/low) junction is also given.
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