Abstract
The samples cut out from Si : Ge crystals with 3% and 1.2% of germanium were studied by means of synchrotron white beam Bragg-case section and projection topography as well as conventional transmission Lang topography. The obtained topographs revealed dominant contrast coming from the segregation of germanium. The use of Bragg-case section topography made possible to follow the shape of growth surfaces inside the crystal. The formation of contrast in Bragg-case section topographs for different orientation of growth surfaces with respect to the incident beam is discussed. The applied methods enabled also revealing growth surface instabilities occurring in some regions of Si : Ge crystals.
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