Abstract
Etching apparatuses using electron cyclotron resonance (ECR) have been used by major ULSI manufacturers, and uniform plasma generation on a large wafer is realized. However, it is not well understood the reason for the uniform plasma generation, which is crucial for the industrial field. By using a simulation technique and a theoretical analysis of a plasma waveguide with an outer vacuum layer with imposed boundaries, we investigated the microwave distribution in the ECR reactor to understand the mechanism of the uniform plasma generation. Contrary to the usual understanding of the right-hand polarized wave (R wave) damping in the ECR plasma production scheme, we found that the introduced R wave is transformed into the extraordinary wave and the electrostatic wave of Trivelpiece–Gould wave by comparing the theoretical result considering the wall effect. Moreover, we found that surface wave is observed at the interface of the quartz window and the plasma.
Published Version
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