Abstract
Boundary conditions for the excess minority carrier concentrations at the space-charge region (SCR) edges are developed and used to evaluate the current-voltage characteristics of pn heterojunctions. Carrier transport by drift and diffusion within the SCR, by thermionic emission across the interface, and by minority carrier diffusion within the quasi-neutral bulk are included. When transport across the interface is slower than that across the SCR, the results reduce to the emission-diffusion model of Perlman and Feucht. Alternatively, when carrier transport within the SCR is the limiting process, a result analogous to the diffusion theory of metal-semiconductor diodes results. Finally, if the current is limited by minority carrier diffusion within the quasi-neutral bulk, the quasi-Fermi levels are constant within the SCR and the results are similar to those for pn homojunctions.
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