Abstract
In this paper we obtain information concerning the bound states of the He-GaAs(110) attractive interaction potential from analysis of the experimental data of Cardillo et al. We conclude the existence of three levels ${\mathcal{E}}_{0}\ensuremath{\simeq}\ensuremath{-}9.4$ meV, ${\mathcal{E}}_{1}\ensuremath{\simeq}\ensuremath{-}4.4$ meV, and ${\mathcal{E}}_{2}\ensuremath{\simeq}\ensuremath{-}0.90$ meV that lead to a well depth of \ensuremath{\sim}12.2 meV and a ${C}_{3}\ensuremath{\simeq}153$ meV ${\mathrm{\AA{}}}^{3}$, in excellent agreement with the theoretical value of 156 meV ${\mathrm{\AA{}}}^{3}$ obtained by Vidali and Cole.
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