Bottom metal strip based ferroelectric Schottky Barrier MOSFET

Abstract

This study develops and simulates a novel Schottky Barrier MOSFET topology that enhances device performance. The suggested device makes use of a ferroelectric material, a metal strip, and a HfO2 layer. The use of high work function metal has significantly lowered the SB thickness due to which a considerable high ION (1.72 × 10-4 A/µm) and ION-IOFF ratio (1.72 × 105) is obtained in the suggested SB-MOSFET in contrast to conventional SB-MOSFET having ION=(3.77 × 10-6) A/µm and ION/IOFF = 2.37 × 102. In contrast to the traditional SB-MOSFET, it has been noticed that the cut-off frequency, intrinsic gain, gain bandwidth product, and gain transconductance frequency product have all significantly improved.