Borosilicate Glass Films as Intermetal Dielectrics

Abstract

The properties of as‐deposited borosilicate glass (BSG) films are reported as they relate to intermetal dielectric applications. BSG films can be deposited from conventional atmospheric‐pressure chemical vapor deposition (APCVD) systems with high deposition rates and excellent step coverage conformality (0.8). Although the room‐temperature stress of as‐deposited BSG films is typically moderate tensile , the stress after equilibrating with room‐temperature ambients is frequently low compressive stress and depends on the bound water content, boron content, and deposition temperature of the films. Subsequent alloying heat‐treatments can change the stress of the film. Films with less than 4.5 weight percent boron were shown to be stable to moisture‐induced decomposition. The as‐deposited films exhibit excellent dielectric breakdown strengths of typically 9 MV/cm and a dielectric constant of 3.8 at 1 MHz.