Abstract
ABSTRACTBoron nitride thin films have been produced on silicon carbide whiskers (SiCw) by a novel processing method. A polydivinylbenzene (PDVB) coating was formed in situ on the whisker surface which was subsequently thermally degraded creating a highly porous carbon layer. The total available pore volume of the carbon layer/ SiCw system (SiCwC) was varied by controlling the quantity of PDVB adsorbed. Next, anhydrous sodium borate was mixed with the SiCwC, and upon heating, the precursor melted and absorbed into the porous carbon layer followed by nitridation with anhydrous ammonia. Under certain reaction conditions, silicon oxynitride was also produced as a sublayer. The amount of the latter can be controlled by varying the reaction temperature and time. Control over the thickness of the BN film was achieved by varying the amount of the carbonized polymer layer in proportion to the quantity of sodium borate.
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