Abstract
This work examined the impact of different levels of B-doping on the structural, morphological, optical, and electrical characteristics of ZnO thin films. Boron-doped zinc oxide thin films were deposited on glass substrates using the spin-coating technique. The B concentrations employed were 1, 2, 3, 4, and 5 at. %. The systematic characterizations manifest that the properties of the deposited films were heavily influenced by changing concentrations of B doping. It was found that as the concentration of B-doping increases, the values of grain size decrease. In addition, it was observed that ZnO thin films containing a lower concentration of B dopant exhibited higher transparency. Finally, it was figured out that the resistivity of the films declines dramatically with a higher content of B-doping. The results of our research may initiate further inquiries into the creation of superior thin films.
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