Abstract
A preliminary account is given of a low-temperature channeling study of the location of implanted iodine atoms in pure and p-doped (2 × 10 19 atoms boron/cm 3) Si. In recent Mössbauer and channeling work performed in this laboratory different sites were found in these cases. Channeling dips for Si and I for the main strings were obtained in both cases and compared with results obtained with a newly developed computer simulation program. It was found that after thermal annealing nearly all I atoms occupy off-substitutional sites which are different for doped and undoped Si. For doped Si a unique site could be determined. It is concluded that the displacements may be due to vacancy-association of the I atoms. This implies that we observed sites that are different from those found in Mössbauer spectroscopy.
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