Abstract
The nuclear reaction 11B(p, α)2α has been used for the determination of boron impurities in silicon. α-particles with a continuous energy spectrum are produced by the three-body-dynamics of this reaction. Therefore, the differential cross section of this reaction has specifically been defined for materials analysis and measured at the three different laboratory angles θ = 108°, 138°, 158°, for incident proton energies between 150 keV and 800 keV. The formalism for concentration measurements has been developed for a thin boron layer and for a homogeneous boron distribution in the target. The concentration has been compared with results of charged particle activation analysis (CPAA) using the nuclear reaction 10B(d,n) 11C.
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