Boron Delta-Doping in Si : B Stacks By RP-CVD Epitaxy

Abstract

Low resistivity materials are required for advanced MOS or equivalent technologies. High boron in-situ doped Si epitaxy is known to create defects that increase the resistivity. Boron delta-doping (Si:B epitaxy alternating with boron saturation layers) is a potential solution to overcome this limitation. Using the delta-doping process at 750 °C in a Reduced Pressure Chemical Vapor Deposition reactor, a resistivity two times lower than that without delta-doping (8.9x10-4 Ω.cm and 1.86x10-3 Ω.cm respectively) was achieved. SIMS characterization measured a total boron concentration of 3.3x1021 at.cm-3. However, the delta-doping processes , as a function of the soaking volume (product of B2H6 flow and saturation time), resulted in low crystal quality and highly stressed layers. Moreover, thin layers were observed by TEM likely due to the formation of the SiBx phase at each saturation layer. For an equivalent soaking volume, a better crystal quality was obtained with a high B2H6 flow and short saturation time.