Bonding configuration and electrical properties of nitrogen and fluorine incorporated SiOC:H thin film prepared by plasma enhanced chemical vapor deposition

Abstract

In this study, the organosilicate glass (OSG) incorporated with nitrogen and fluorine (N-F:OSG) was investigated by examining the bonding configuration, refraction index, modulus, permittivity and breakdown field strength. The results of Fourier transform infrared spectroscopy show that Si–O, Si–C, Si–N, and Si–F are the major bonding in the N-F:OSG films. The XPS analysis shows that the Si 2p, F 1s, and N 1s core levels of the N-F:OSG film shifts to higher binding energy due to the neighborhood bonding of higher electronegative elements. For electrical properties, the permittivity and breakdown stress of the N-F:OSG are comparable with the OSG film accompanied with superior mechanical hardness to the OSG film.