Abstract
Surface activated bonding (SAB) technology was investigated to realize InP-based active photonic devices on a silicon-on-insulator (SOI) substrate for highly compact photonic integrated circuits (PICs). A wide area five-quantum-wells (5QWs) GaInAsP/InP membrane structure was successfully bonded onto an SOI waveguide using a low-temperature (150 °C) N2 plasma SAB method. The full width at half maximum (FWHM) of the photoluminescence (PL) of the 5QWs membrane structure on SOI was comparable to that of conventional QWs. It was revealed that the PL intensity distribution and peak wavelength shift of the GaInAsP 5QWs structure around the Si waveguides were small.
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