Abstract
Phase change random access memory devices made from chalcogenides compounds, such as Ge2Sb2Te5, have attracted much attention because of their high-speed read-write and low power consumption capabilities. The phase change in Ge2Sb2Te5 is thought to be characterized by the displacement of Ge atoms, accompanying relaxation of surrounding Sb and Te atoms. Here we examine a new approach, that is the manipulation of Ge–Te bonds using linearly-polarized femtosecond near-infrared optical pulses. As a result, p-polarized pump pulses are found to be more effective in inducing the precursor of phase change, probably due to the atomic arrangements along the unique axis of the superlattice structure.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
