Abstract
It has been one of the most important issues to minimize the stress reduction during phase change in GST (Ge2Sb2Te5) alloy for PRAM (Phase-change Random Access Memory) applications, because the alloy has been reported to face the significant stress during the phase change. We fabricated GST/oxide/substrate as a basic structure, and then added two more structures by capping an adhesion layer (Ti) or a barrier metal (TiN) on GST layer, respectively. We report that TiN-capped structure shows about 40% stress reduction during the phase change compared with that of the basic structure. The stress reduction is considered to be due to the intrinsic compressive stress in TiN film itself.
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