Abstract
This paper proposes an OLED pixel compensation circuit that copes with threshold voltage variation, narrow data voltage range, and body effect on a backplane of silicon-based transistors. It consists of six PMOS transistors and two capacitors. The data voltage range is extended by the capacitor division with two capacitors, and the connection of both source and gate nodes to the supply voltage makes the driving transistor free from the body effect. In addition, the reference voltage is used to initialize the gate node voltage of the driving transistor as well as to adjust the data voltage region. By the SPICE simulation, it is verified that the current error over the threshold voltage variations of ±10 mV is reduced to be −1.200% to 0.964% at the maximum current range of around 8 nA, and the data voltage range is extended to 3.4 V, compared to the large current error range from −21.46% to 27.36% and the data voltage range of 0.41 V in the basic 2T1C circuit. In addition, the body-effect-free circuit outperforms the latest 4T1C circuit of the current error range from −3.279% to 3.388%.
Highlights
Augmented reality and virtual reality (AR/VR) have been attracting much attention in various areas such as games [1], education [2], business [3], surgery [4], imaging [5], and tourism [6] due to their immersion and interaction [7]
The capacitive division (CD) method uses two capacitors to enlarge the data voltage range [19,20,21], where a capacitor is integrated by the metal-insulator-metal (MIM) one, and the other is implemented by the parasitic gate capacitor of the driving transistor
This paper proposes a pixel compensation circuit based on the CD scheme for a high resolution OLED on silicon (OLEDoS) microdisplay
Summary
Augmented reality and virtual reality (AR/VR) have been attracting much attention in various areas such as games [1], education [2], business [3], surgery [4], imaging [5], and tourism [6] due to their immersion and interaction [7]. Because the main purposes of AR/VR are to enrich the real world by overlaying virtual objects and to offer an immersive environment, a promising AR/VR set requires a high quality head-mounted display (HMD) with high resolution, high frame rate, small form factor, and high dynamic range [8] To meet these requirements of the near-eye displays for HMD headsets, micro organic light emitting diode (OLED) displays have been widely studied and developed on a backplane of silicon-based transistors. The CD method uses two capacitors to enlarge the data voltage range [19,20,21], where a capacitor is integrated by the metal-insulator-metal (MIM) one, and the other is implemented by the parasitic gate capacitor of the driving transistor These previous approaches do not address the body effect issue. The proposed circuit extends the data voltage range and compensates for the Vth variation without the body effect
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