BMN-based transparent capacitors with high dielectric tunability

Abstract

This paper covers the fabrication of a novel transparent capacitor with high dielectric tunability using Sb–doped SnO2/Ag/Bi1.5MgNb1.5O7/W–doped SnO2 structure and its observed dielectric tunable characteristics. This kind of Bi1.5MgNb1.5O7-based transparent capacitor shows an average optical transmittance of ∼80% (including the substrate) in the visible light range (380–780 nm), and a dielectric tunability of ∼18% (0.83 MV/cm) at 100 kHz, while the dielectric constant and loss tangent are about 87 and 0.0032 at zero bias field, respectively. The transparent capacitor exhibits a leakage current density of approximately 5.8 × 10−7 A/cm2 at 0.4 MV/cm. We believe that Bi1.5MgNb1.5O7-based capacitors are a promising candidate for transparent electric-field tunable device applications.