Abstract
The shifts of emission energy from InAs quantum dots (QDs) in the GaAs matrix due to change in the QD stacking period have been numerically analyzed by investigating the strain modified shifts of band edges. Narrower stacking results in a blueshift of emission energy from direct band gap transition provided the QD spacing is wide enough to avoid electronic coupling. Through a comparison with existing experimental results in the literature, processing methods and variables that have benefits in achieving a blueshift have been inferred. A blueshift through decreased QD spacing has been proposed as a token of the integrity of a processed QD nanostructure .
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