Blue to red electroluminescence from Au/native silicon oxide/p-Si structure subjected to rapid thermal annealing

Abstract

Blue, green, yellow and red electroluminescence (EL) from the semitransparent Au/native silicon oxide (NSO)/p-Si structure was observed. The p-Si wafers with NSO films were subjected to rapid thermal annealing (RTA) at a series of temperatures between 600 and 1000°C and then the semitransparent Au/NSO/p-Si structure was made. Under forward biases over 3 V, strong EL could be observed. The effect of RTA temperature on EL spectra of the semitransparent Au/NSO/p-Si structure was studied. It was found that with increasing RTA temperature from 600 to 900°C, wavelength of the main EL peak varied between 460 and 680 nm and intensity of the main EL peak increased monotonously.