Abstract
We have for the first time observed the effect of hot electrons on the recombination radiation of the intense blue emission around 450nm (about 2.76eV) in an InGaN-based single-quantum well blue LED. The forward-biased injection electroluminescence spectrum reflects the distribution function of hot carriers injected into the active layer. Emission spectral characteristics under forward-biased high pulse-currents can be quantitatively explained by the drifted Maxwellian distribution functions of hot electrons. A maximum temperature of hot electrons was estimated to be about 400K, which is much higher than the lattice temperature at current densities of about 5400A/cm2 at 77K.
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