Abstract
Frequency doubling of diode laser radiation was achieved by operating an AR-coated diode laser in an extended laser cavity which contained a monolithic potassium niobate frequency doubling resonator as an intracavity element. Extended cavity operation ensured that the diode laser would oscillate only at frequencies that were resonant with the intracavity resonator. A diffraction grating was used to ensure single mode oscillation at the wavelength needed for noncritically phase-matched second harmonic generation. At 100 mA of injection current to the GaAlAs diode laser, 14 mW of 429 nm light were produced.
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