Abstract
II-VI heterostructures composed of ZnMgSSe/ZnSe/ZnCdSe layers have been grown by molecular beam epitaxy on conducting ZnSe substrates and fabricated into blue and green laser diodes. These are the first laser diodes ever prepared on ZnSe. Pulsed laser emission from devices with no facet coatings has been obtained from 77 K to near room temperature. CW laser emission was also observed at 77 K.
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