Abstract
p-type Sb-doped ZnO/i-CdZnO/n-type Ga-doped ZnO was grown by dual ion beam sputtering deposition system. Current-voltage characteristics of the heterojunction showed a diode-like rectifying behavior with a turn-on voltage of ~5 V. The diode yielded blue electroluminescence emissions at around 446 nm in forward biased condition at room temperature. The emission intensity increased with the increase of the injection current. A red shifting of the emission peak position was observed with the increment of ambient temperature, indicating a change of band gap of the CdZnO active layer with temperature in low-temperature measurement.
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