Blue and violet photoluminescence from high-dose Si +- and Ge +-implanted silicon dioxide layers

Abstract

Strong blue (around 470 nm) and violet (around 395 nm) photoluminescence (PL) at room temperature (RT) was obtained from thermally-grown SiO 2 films on crystalline Si implanted with Si + and Ge + ions, respectively. Photoluminescence excitation (PLE) spectroscopy measurements indicate maximum PL at 248 nm (for Si +) and 242 nm (for Ge +). The blue PL intensity was investigated as a function of subsequent furnace and flash lamp annealing. The results obtained are interpreted in terms of the excess atoms introduced in the SiO 2 network.