Abstract
A new method for manufacturing nanostructured black silicon (b-Si) by growing cone-shaped (pointed) filamentous nanocrystals (nanowires, FNWs) on the surface of single-crystal Si-plates has been proposed. b-Si samples with reflectivity less than 0.1% have been obtained. It has been shown that the b-Si reflection coefficient depends on the sizes of the FNWs in the visible region of the spectrum: its minimum value (less than 0.1%) has been achieved at diameters at the base of the FNWs of 650–750 nm and a length of 1.5–2 μm.
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