Abstract
We report record contact resistance and transconductance in locally back-gated black phosphorus p-MOSFETs with 7-nm thick HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> gate dielectrics. Devices with effective gate lengths, L <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">eff</sub> , from 0.55 to 0.17 μm were characterized and shown to have contact resistance values as low as 1.14 ± 0.05 Q-mm. In addition, devices with L <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">eff</sub> = 0.17 μm displayed extrinsic transconductance exceeding 250 μS/μm and ON-state current approaching 300 μA/μm.
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