Abstract

We describe the synthesis of electron acceptors consisting of bithiazolidinylidene (BT) derivatives incorporated into solution processible polymers. Novel BT-containing polymers displayed p-doping behavior when in contact with the n-type transition metal dichalcogenide (TMDC) MoS2. A work function (WF) increase of MoS2, resulting from contact with BT polymers, was measured by Kelvin probe force microscopy (KPFM), representing the first example of polymer p-doping of MoS2, which is beneficial for advancing the design of electronically tailored TMDCs.

Highlights

  • To date, reported examples of electron donating materials that decrease the work function of transition metal dichalcogenide (TMDC) (n-doping) are much more common than electron acceptors that increase the transition metal dichalcogenides (TMDCs) work function (p-doping)

  • To access the full range of TMDC electronics, we focus our efforts on p-doping by noncovalent physisorption without disturbing the inherent TMDC structure

  • The facile accessibility of hydroxyethyl BT 1a allowed its multi-gram scale synthesis and prompted our attempt to incorporate it into polyurethanes

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Summary

Introduction

To date, reported examples of electron donating materials that decrease the work function of TMDCs (n-doping) are much more common than electron acceptors that increase the TMDC work function (p-doping). We sought to broaden the scope of BT chemistry by synthesizing BT derivatives capable of polymerization and subsequent solution processing as p-dopant coatings on TMDCs. We employed this one-step approach to yield difunctional BT monomers setup for integration into polymers by step-growth polymerization.

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