Abstract
Development of memories based on organic soft materials is a current industrial niche aimed at the upper contacts flash memories. The electrical bistability of such materials makes them ideal candidates for cost-effective, fast-programming switching devices. Hybrid thin films of SiO2 with Rose Bengal (bis-triethylammonium) dopant are here reported for the first time, together with their characterisations. Technology-wise the main advantage of the films is the possibility to cast photolithographically, which is also cost-effective. The physical and chemical stability of the films yields reproducible devices, from both the microtechnological and electrical point of view.
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