Abstract
A one-transistor tunnel static random access memory (SRAM) cell is proposed and analyzed. The new cell uses the bistability of a tunnel diode pair to latch the body voltage of a MOSFET that then shifts the threshold voltage and enables sensing of the state by the measurement of the MOSFET transistor current. Band-to-band tunneling is used to write the cell. This cell offers more than 10 000× reduction in static power compared to the 6-transistor (T) SRAM at the 32-nm technology node. A cell size of 48F2 is shown, which is comparable to a 6-T SRAM. Access times should be similar to high performance a 6-T SRAM given the same transistor technology.
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