Abstract

BiSrCaCuO films were prepared under ultrahigh vacuum by coevaporation of the pure elements. The copper was deposited from an electron gun, and the other components were evaporated from Knudsen cells. In situ oxidation of the films was performed by an atomic oxygen plasma source. The films were annealed in different conditions, and we discuss the proportion of 2212 and 2223 phases obtained related to the resistive transition. This composition depends on the initial composition determined by Rutherford Backscattering, and on the deposition conditions. Films were also prepared by flux modulation at the atomic layer scale. The results obtained by this way are promising. The main difficulty in order to reach the right stoichiometry is related to the variations of the sticking coefficient of the bismuth. This problem will be discussed.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.