Bismuth ion-implanted solid-phase epitaxially grown shallow junction for metal–oxide–semiconductor field-effect transistors

Abstract

A shallow, low-resistive solid phase epitaxially regrown n+∕p junction was investigated for sub-70 nm metal–oxide–semiconductor field-effect transistors (MOSFETs), using bismuth (Bi) ion-implantation and low temperature rapid thermal annealing. Bi-doped specimens showed a shallow junction depth of ∼15nm (at a background concentration of 5×1018cm−3), low sheet resistance, and leakage current at low temperature processing (700°C). The results indicated that Bi could be a proper dopant for low temperature activated source and drain extensions that are fabricated at low temperatures with the implementation of high-κ dielectric and metal–electrode gate stacks in next generation MOSFETs.