Abstract
Birefringence at room temperature is analysed for interdiffusion induced (disordered) Al0.3Ga0.7As/GaAs single quantum well structures in the wavelength range 0.5 μm to 1.0 μm. The confinement profile for the disordered QW is modelled by an error function and the refrctive index model includes excitonic effects and contributions from the γ, X and L Brillouin zones. Results show that at longer wave lengths the birefringence is small and varies from positive to negative before reducing to zero as interdiffusion proceeds. For wavelengths between the QW and barrier band-edges the birefringence is large and reduces with increasing interdiffusion.
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