Abstract
Low power operations of resistive switching memory using Al/Cu/GeOx/W memristor have been reported for the first time. Under the SET process the copper ions migrate through defects into the GeOx solid-electrolyte and there is the formation of a copper filament by reduction process. However, the RESET process or dissolution of this filament occurs by an oxidation process. Excellent uniformity with narrow distributions of SET/RESET voltages and low resistance states (LRS) are obtained. Furthermore, high resistance ratio of >104 with multi-level (MLC) operation and low SET and RESET powers (~19 and ~ 8.36 µW) are advantages for future high density memory applications.
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