Abstract
In this work, we have fabricated the MgZnO thin films directly on low resistive silicon substrates by using a chemical solution deposition route. Besides the investigation of the structures, morphologies, chemical states, and photoluminescence properties of MgZnO thin films, the bipolar resistive switching behaviours have been evaluated in the simple Ag/MgZnO/Si structures. The self-compliance resistive switching characteristics simplify the device configuration and circuit design for practical applications. In addition, the multilevel storage capabilities have also been investigated by regulating different operation voltages or compliance currents, respectively. The four level storage capabilities show long retention time and good cycling performance. The resistive switching mechanism has been explicated by the formation and rupture of Ag filament based on the electrochemical metallization model. This work suggests that the Ag/MgZnO/Si structures have potential non-volatile multilevel memory applications.
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