Abstract
This paper reports the resistive switching characteristics and mechanism of CeO2 based ReRAM. The CeO2 films were deposited on Nb:SrTiO3 substrates under different oxygen pressures (0.01Pa and 10Pa) to obtain different concentrations of oxygen vacancies in the films. The results show that the resistive switching properties become more pronounced with more oxygen vacancies in the CeO2 films. The device with 0.01Pa oxygen pressures exhibits high resistive switching ratio of 2×103 and multilevel memories. Furthermore, a model based on the modification of the interface property induced by the oxygen vacancies in these structures is proposed to elucidate the underlying physical origins. Key words: resistive switching, oxygen vacancies, carrier injection, multilevel memories.
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