Abstract
ABSTRACTAmorphous SrTiO3 thin films grown on fluorine-doped tin oxide (FTO) glass were fabricated via the sol-gel route and coating process. The composition and chemical state of the thin films were studied by X-ray photoelectron spectroscopy. A high switching ratio and good endurance were demonstrated in the Au/amorphous SrTiO3/FTO/glass memory cells, with an ability to achieve a ratio of high and low resistance (Roff/Ron) of 102. A stable switching voltage and uniform resistance states could be identified, moreover, using standard Weibull distribution. The results showed that Ohmic and space charge limited conduction mechanisms coexisted in the amorphous SrTiO3 thin films. Ohmic conduction dominated in the initial high- and low-resistance state, but the space charge limited conduction mechanism was dominant in the later high-resistance field. The resistance switching effect in the device was explained by the formation and rupture of oxygen vacancies interrelated with filaments. These amorphous SrTiO3 films have potential resistive memory applications.
Highlights
In recent decades, continuous optimization of computer technologies marking the rapid development of modern information technology has progressively changed people’s lifestyles
Amorphous SrTiO3 thin films grown on fluorine-doped tin oxide (FTO) glass were fabricated via the sol-gel route and coating process
FTO was used as the electrode; we report here the resistive switching (RS) characteristic of an Au/amorphous SrTiO3/FTO/Glass memristor fabricated by the sol-gel method
Summary
Continuous optimization of computer technologies marking the rapid development of modern information technology has progressively changed people’s lifestyles. There are many kinds of memory devices based on different mechanisms and materials that are highly likely to replace non-volatile memory, such as resistive random access memory (ReRAM), ferroelectric RAM (FeRAM), magnetic RAM (MRAM), and phase change memory (PCM) [1,2,3,4,5,6] Among these new types of memory, resistive switching (RS) memory has been widely studied due to such advantages as its simple preparation process, low energy consumption, predominant memory density, small size, and good compatibility with the conventional CMOS process [7,8].
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