Abstract
Transition Metal Dichalcogenides (TMDs) owing the unique 2D nanoscale structure, has been the dominant material to be analyzed. Considering the recent progresses in electronic devices based on TMDs, WS2 is yet to be explored in the field of resistive switching (RS) devices. In order to study the resistive switching behavior, WS2 thin film was grown on Pt/Ti/SiO2/Si substrate via Chemical Vapor Deposition (CVD) process. The structural and surface morphological study revealed the crystallinity and uniformity of the as-grown WS2 thin film. Current-voltage measurements of the Al/WS2/Pt device showed bipolar resistive switching (BRS) properties with high on/off ratio and excellent reproducibility.Transition Metal Dichalcogenides (TMDs) owing the unique 2D nanoscale structure, has been the dominant material to be analyzed. Considering the recent progresses in electronic devices based on TMDs, WS2 is yet to be explored in the field of resistive switching (RS) devices. In order to study the resistive switching behavior, WS2 thin film was grown on Pt/Ti/SiO2/Si substrate via Chemical Vapor Deposition (CVD) process. The structural and surface morphological study revealed the crystallinity and uniformity of the as-grown WS2 thin film. Current-voltage measurements of the Al/WS2/Pt device showed bipolar resistive switching (BRS) properties with high on/off ratio and excellent reproducibility.
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