Abstract
Transition Metal Dichalcogenides (TMDs) owing the unique 2D nanoscale structure, has been the dominant material to be analyzed. Considering the recent progresses in electronic devices based on TMDs, WS2 is yet to be explored in the field of resistive switching (RS) devices. In order to study the resistive switching behavior, WS2 thin film was grown on Pt/Ti/SiO2/Si substrate via Chemical Vapor Deposition (CVD) process. The structural and surface morphological study revealed the crystallinity and uniformity of the as-grown WS2 thin film. Current-voltage measurements of the Al/WS2/Pt device showed bipolar resistive switching (BRS) properties with high on/off ratio and excellent reproducibility.Transition Metal Dichalcogenides (TMDs) owing the unique 2D nanoscale structure, has been the dominant material to be analyzed. Considering the recent progresses in electronic devices based on TMDs, WS2 is yet to be explored in the field of resistive switching (RS) devices. In order to study the resistive switching behavior, WS2 thin film was grown on Pt/Ti/SiO2/Si substrate via Chemical Vapor Deposition (CVD) process. The structural and surface morphological study revealed the crystallinity and uniformity of the as-grown WS2 thin film. Current-voltage measurements of the Al/WS2/Pt device showed bipolar resistive switching (BRS) properties with high on/off ratio and excellent reproducibility.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
