Abstract
We have investigated highly flexible memristive devices using reduced graphene oxide (RGO) nanosheet nanocomposites with an embedded GQD Layer. Resistive switching behavior of poly (4-vinylphenol):graphene quantum dot (PVP:GQD) composite and HfOx hybrid bilayer was explored for developing flexible resistive random access memory (RRAM) devices. A composite active layer was designed based on graphene quantum dots, which is a low-dimensional structure, and a heterogeneous active layer of graphene quantum dots was applied to the interfacial defect structure to overcome the limitations. Increasing to 0.3–0.6 wt % PVP-GQD, Vf changed from 2.27–2.74 V. When negative deflection is applied to the lower electrode, electrons travel through the HfOx/ITO interface. In addition, as the PVP-GQD concentration increased, the depth of the interfacial defect decreased, and confirmed the repetition of appropriate electrical properties through Al and HfOx/ITO. The low interfacial defects help electrophoresis of Al+ ions to the PVP GQD layer and the HfOx thin film. A local electric field increase occurred, resulting in the breakage of the conductive filament in the defect.
Highlights
Changes in the capacity and intensive industrial structure of information storage devices require high-performance storage devices for the functionality of complex systems [1,2,3,4,5,6,7,8,9,10,11,12]
The resistive switching behavior and electrical characteristics of flexible devices with Al/PVP GQD/HfOx/ITO/graphene/PET structures were presented according to the GQD concentration in the PVP GQD active layer
This result is because the defect depth at the interface decreased as the PVP GQD concentration increased
Summary
Changes in the capacity and intensive industrial structure of information storage devices require high-performance storage devices for the functionality of complex systems [1,2,3,4,5,6,7,8,9,10,11,12]. In the stacked structure of organic field effect transistors (OFETs) devices and various inorganic thin films, it is impossible to control defects fundamentally occurring at the interface, which directly deteriorated device performance. Among these materials, graphene oxide (GO) has been extensively studied to develop electronic devices, and reduced graphene oxide (rGO) can be produced from electrically insulating GO by removing the oxygen groups via thermal and chemical reductions. As the concentration of PVP GQDs increased, the defect depth at the interface decreased, confirming the appropriate electrical repeat characteristics at the voltage change through the Al and HfOx/ITO electrodes. This work first provides evidence of localized graphitic channels formed in nanoscale GO thin films by oxygen ion diffusion
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