Bipolar polymer semiconductor blends of C60‐end‐capped poly(4‐diphenylaminostyrene) and poly(4‐diphenylaminostyrene): One‐pot synthesis and charge‐transport properties

Abstract

AbstractThree types of fullerene (C60)‐end‐capped poly(4‐diphenylaminostyrene) (C60–PDAS) and poly(4‐diphenylaminostyrene) (PDAS) blends were prepared to investigate their potential as bipolar polymer semiconductors. The concentration of C60 in the C60–PDAS/PDAS blends strongly affected the hole and electron drift mobility values; the hole drift mobility decreased with an increase in the C60 concentration. However, the electron drift mobility increased with an increase in the C60 concentration. The hole and electron drift mobility values were almost the same for the 1/2 C60–PDAS/PDAS blend; therefore, this polymer blend was thought to be a bipolar polymer semiconductor. © 2011 Wiley Periodicals, Inc. J Appl Polym Sci, 2011