Bipolar nonlinear photo-controlled thyristor with variable-resistance effect

Abstract

With the advancement of artificial intelligence technology, volatile memristors emulating neurons have gained widespread attention in the field of neuromorphic computing. This paper proposes a volatile bipolar nonlinear photo-controlled thyristor (PCT) compatible with CMOS technology, providing a reference for the structural design of silicon-based neurons. Technology computer aided design (TCAD) simulation is used to analyze the variable-resistance mechanism and photoelectric effect of the device. The PCT fabricated based on the 0.18 μm Bipolar-CMOS-DMOS (BCD) process has two electrode ports. When a fixed amplitude bipolar periodic excitation signal is applied to the anode of the device, the output current and voltage of PCT show nonlinear changes at the same time due to the negative differential resistance effect, satisfying the fundamental requirements of an oscillatory neuron. By further coupling the photoelectric effect, the device can achieve continuous switching from high-resistance state to low-resistance state under light source driving conditions. Finally, the transient data of PCT is extracted and the hysteresis loop is fitted, which verifies the accuracy of the device theory and model simulation.Index Terms—CMOS technology, variable-resistance effect, photoelectric effect, TCAD simulation.