Abstract
The potential of a BIpolar Cathode Transferred-Electron Device (BICTED) for mm-wave RF-power generation is theoretically investigated by means of a time-domain circuit simulator based on a semiconductor device macroscopic physical model. In this N +P +NN + bipolar transistor-like structure, the emitter-base junction is used as an electron injection mechanism. The collector region operates under accumulation and transit-time mode classically observed in mm-wave GUNN diodes. In a first step, the device internal RF operation is analysed by means of CW pure sine simulations. Next, more realistic BICTED oscillator modeling demonstrates significant RF-performance at 62.5 GHz.
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