Abstract
We have investigated Franz–Keldysh oscillations (FKOs) from a base-emitter junction in an InGaP/GaAs heterojunction bipolar transistor structure using photoreflectance spectroscopy. The profiles of the FKOs originating from the InGaP emitter are compared with the line shapes calculated with the use of electro-optic functions. It is found that the line shape of the FKOs is remarkably affected by interference of probe light due to the multiple layer structure. Taking account of the interference effect, we have derived a novel analysis method for a convenient linear plot of the extremum positions of FKOs. The band-gap energy estimated with the present method well agrees with the band-gap energy obtained from the photoluminescence measurement of an InGaP/GaAs heterostructure for a reference.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Physica E: Low-dimensional Systems and Nanostructures
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
