Abstract
Biosynaptic devices based on chicken egg albumen (CEA):graphene quantum dot (GQD) hybrid nanocomposites were fabricated to achieve stable synaptic behaviors. Current-voltage (I-V) curves for the biosynaptic devices under consecutive negative and positive voltage sweeps showed clockwise pinched hysteresis, which is a critical feature of a biological synapse. The effect of the GQD concentration in the CEA layer on the device performance was studied. The retention time of the biosynaptic devices was relatively constant, maintaining a value above 104 s under ambient conditions. The carrier transport mechanisms of the biosynaptic devices were described and analyzed on the basis of the slopes of the I-V curves and their fittings.
Highlights
Biosynaptic devices based on chicken egg albumen (CEA):graphene quantum dot (GQD) hybrid nanocomposites were fabricated to achieve stable synaptic behaviors
This paper presents data for the electrical properties and the operating mechanisms of biosynaptic devices using CEA/Graphene quantum dots (GQDs) nanocomposites as an active layer
The biosynaptic devices were focused on the I-V curves under applied negative voltages because the resistive switching devices based on CEA are operated as a Set process under applied negative voltages and a Reset process under applied positive voltages[18]
Summary
Biosynaptic devices based on chicken egg albumen (CEA):graphene quantum dot (GQD) hybrid nanocomposites were fabricated to achieve stable synaptic behaviors. The use of nanoscale integrated circuitry based on a biomimetic brain to operate a neuromorphic system is an emerging research field because such platforms offer high-speed processing and improved energy efficiency. These demands have prompted the development of two-terminal memristors as promising candidates for artificial synapses because they can emulate synaptic plasticity with low power consumption. Hybrid nanocomposites based on GQDs, which have a remarkable charge-storage capability, embedded in a polymer layer, which has a low-dielectric constant, are very effective active layers in memristive and synaptic devices[14,24]
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