Abstract
One diode and one resistor (1D–1R) memristive devices based on inorganic Schottky diodes and poly(methylsilsesquioxane) (PMSSQ):graphene quantum dot (GQD) hybrid nanocomposites were fabricated to achieve stable memory characteristics. Current-voltage (I-V) curves for the Al/PMSSQ:GQDs/Al/p-Si/Al devices at room temperature exhibited write-once, read-many-times memory (WORM) characteristics with an ON/OFF ratio of as large as 104 resulting from the formation of a 1D–1R structure. I-V characteristics of the WORM 1D–1R device demonstrated that the memory and the diode behaviors of the 1D–1R device functioned simultaneously. The retention time of the WORM 1D–1R devices could be maintained at a value larger than 104 s under ambient conditions. The operating mechanisms of the devices were analyzed on the basis of the I–V results and with the aid of the energy band diagram.
Highlights
The enhancement of the electrical characteristics for memristive devices fabricated utilizing hybrid nanocomposites has been intensively investigated owing to their having excellent advantages of low cost, high flexibility, simple fabrication, and low power consumption[1,2,3]
Hybrid nanocomposites based on Graphene quantum dots (GQDs) with a remarkable charge-storage capability embedded in a polymer layer with a low-dielectric constant are very effective in serving as the active layer in memristive devices[13]
The structure of the device consisted of a PMSSQ active layer containing GQDs and a Al/p-Si layer, with those two layers separating the top and the bottom Al electrodes
Summary
The enhancement of the electrical characteristics for memristive devices fabricated utilizing hybrid nanocomposites has been intensively investigated owing to their having excellent advantages of low cost, high flexibility, simple fabrication, and low power consumption[1,2,3]. Graphene quantum dots (GQDs), which are included in the category of the ultrafine graphene family, have emerged as excellent charge-trapping materials for potential applications in memristive memory devices because of their unique chemical inertness, low toxicity, and large work function[7]. Cross-talk interference between memristive cells can originate from leakage current paths through neighboring cells in cross-bar array or an excess of current, may cause electrical misreading of the device[14,15,16,17]. This phenomenon in memristive devices disturbs the reading process of the selected cell and must be eliminated before such devices can be used for practical applications. The design and the fabrication of 1D–1R devices are relatively very simple
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
