Bio-Organic Based Resistive Switching Random-Access Memory

Abstract

A non-volatile memory is a solid-state device that can retain data even power supply is terminated. It is an essential data storage device that serves as a backbone for the advancement of Internet-of-Things. There are various emerging non-volatile memory technologies in different technology-readiness levels, to replace the existing technologies with limited memory density, operating speed, power consumption, manufacturability, and data security. Of the emerging technologies, resistive switching technology is one of the most promising next generation non-volatile random-access memories. The fundamental working principle of the resistive-switching random-access memory (ReRAM) is based on memristor characterises with metal-insulator-metal stacking structure. Same as other solid-state devices, ReRAM is also facing issue of electronic waste when the memory device is discarded. To overcome this issue, bio-organic materials as green and sustainable engineering materials have been used to fabricate ReRAM. In this review, development of bio-organic based ReRAM, in particular the resistive switching mechanisms and device performance, have been discussed and challenging and future applications of this memory have been provided.