Binding energy of negatively charged excitons in semiconductor quantum well with uniform electric field

Abstract

The energies of negatively charged excitons in semiconductor single quantum wells are studied by a variational method, for the GaAsAlxGa1−xAs system, when a uniform electric field parallel to the confinement direction is applied. The correlation energy, defined as the difference between the energy associated with the relative motion and that of the three particles, increases with the electric field strength and with the well width. For narrow wells, the correlation energy is little affected by the electric field.