Abstract
We present an electrostrictive polymer bimorph controllable with low voltage through an integrated CMOS OFET control system. We have actuated the device by applying voltages up to 400V to the control system, and can actuate the control with 60V switching. The electrostrictor material was used both as the substrate for the transistors and as the dielectric layer for the control circuitry. This allows for a reduction in the number of layers in the structure, minimizing the clamping effect that would compromise the strain capabilities of the device. We have characterized the macroscopic displacement of the structure through a radius of curvature measurement, ranging from 11.4mm to 7.5mm depending on the supply voltage provided. The architecture proposed can be scaled to larger system with higher supply voltages.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
