Abstract
In present-day technology, a bilayer graphene field-effect transistor (BLGNRFET) is known as a suitable alternative for continuing the scaling trend of transistor dimensions. This paper proposes an electrically embedded source-side gate BLGNRFET (EESG-BLGNRFET) in which an appropriate gate engineering takes into account near the source extension. In the proposed structure, this induces a vertical electric field and a larger bandgap in the vicinity of the source for low gate biases reducing off current. The EESG-BLGNRFET benefits from several analog and digital metrics. Intrinsic gain and cut-off frequency 84% and 44% are respectively improved in the EESG-BLGNRFET. Furthermore, the delay and power-delay product (PDP) of the proposed structure are lower than those of the conventional counterpart. It is shown that drain-induced barrier lowing (DIBL) in the EESG-BLGNRFET is decreased that makes the device less sensitive to short-channel effects.
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